Comparison of zincblende-phase GaN, cubic-phase SiC, and GaAs mesfets using a full-band monte carlo simulator
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Published:2003-11
Issue:11
Volume:50
Page:2202-2207
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:en
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Short-container-title:IEEE Trans. Electron Devices
Author:
Weber M.T.,Tirino L.,Brennan K.F.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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