Circuit Reliability Analysis with Considerations of Aging Effect
Author:
Affiliation:
1. Universiyt of Windsor,Department of Electrical and Computer Engineering,Windsor,Ontario,Canada
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9893151/9893215/09893233.pdf?arnumber=9893233
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4. Evaluation of intrinsic parameter fluctuations on 45, 32 and 22nm technology node LP N-MOSFETs
5. Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering
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