A 24–40 GHz Differential SPDT Switch With an NMOS and PMOS Alternating Structure and Leakage-Canceling Capacitors
Author:
Affiliation:
1. Department of Electronic Engineering, Chonnam National University, Gwangju, South Korea
2. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
Funder
Ministry of Science and ICT (MSIT), South Korea, through the ICT Challenge and Advanced Network of HRD (ICAN) Program
IITP
National Research Foundation of Korea (NRF) Grant
Korea Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/9996096/09888763.pdf?arnumber=9888763
Reference21 articles.
1. Frequency-Reconfigurable SP4T Switch With Plaid Metal Transistors and Forward Body Biasing for Enhanced RON × COFF Characteristics
2. A high-power CMOS switch using a novel adaptive voltage swing distribution method in multistack FETs;ahn;IEEE Trans Microw Theory Techn,2008
3. A 25–30-GHz Asymmetric SPDT Switch for 5G Applications in 65-nm Triple-Well CMOS
4. A Small-Size K-Band SPDT Switch Using Alternate CMOS Structure With Resonating Inductor Matching
5. A 2.5-dB Insertion Loss, DC-60 GHz CMOS SPDT Switch in 45-nm SOI
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