A 2.5-dB Insertion Loss, DC-60 GHz CMOS SPDT Switch in 45-nm SOI-Reference-Cited by-同舟云学术

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A 2.5-dB Insertion Loss, DC-60 GHz CMOS SPDT Switch in 45-nm SOI

Published:2011-10 Issue: Volume: Page:
ISSN:
Container-title:2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Parlak Mehmet,Buckwalter James F.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6062355/6062429/06062463.pdf?arnumber=6062463

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A W-Band Phase-Change RF Switch Based on Germanium Telluride Material;2024 IEEE International Conference on Computational Electromagnetics (ICCEM);2024-04-15

2. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

3. Design of Millimeter-Wave Asymmetric Single-Pole Double-Throw Switch in a 45nm SOI CMOS Technology;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

4. A Method to Decrease the Energy Consumption of Silicon-Based GeTe Phase-Change RF Switches;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

5. A 24–40 GHz Differential SPDT Switch With an NMOS and PMOS Alternating Structure and Leakage-Canceling Capacitors;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-01

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