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A Dynamic-Biased Resistor-Based CMOS Temperature Sensor With a Duty-Cycle-Modulated Output

  • Published:2020-09 Issue:9 Volume:67 Page:1504-1508
  • ISSN:1549-7747
  • Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
  • language:
  • Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Tang ZhongORCID,Fang YunORCID,Yu Xiao-PengORCID,Shi Zheng,Lin Ling,Tan Nick Nianxiong

Funder

NSFC-Zhejiang Joint Fund for the Integration of Industrialization and Informatization

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 0.9V Self-Referenced Resistor-Based Temperature Sensor With −0.62/+0.81°C (3σ) Inaccuracy;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-12

2. A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of ±0.15 °C (3σ) From—55 °C to 125 °C;IEEE Journal of Solid-State Circuits;2023-12

3. A Resistor-Based Temperature Sensor with an Inaccuracy of ± 0.14 °C (3σ) from −40 °C to 85 °C;2023 3rd International Conference on Electronic Information Engineering and Computer (EIECT);2023-11-17

4. A low power continuous time hysteresis comparator with an average current consumption of 614nA at 1.5 voltage;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

5. A 13 × W, 94 mK Resolution, CMOS PD ΔΣ M Temperature-to-Digital Converter With Power-Gating Technique;ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC);2023-09-11
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