A 13 × W, 94 mK Resolution, CMOS PD ΔΣ M Temperature-to-Digital Converter With Power-Gating Technique
Author:
Affiliation:
1. Institute of Electrical and Computer Engineering, National Yang Ming Chiao Tung University,Hsinchu,Taiwan
2. Novatek Microelectronics,Hsinchu,Taiwan
Funder
Ministry of Science and Technology
Nova
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10268677/10268683/10268694.pdf?arnumber=10268694
Reference11 articles.
1. A Compact Resistor-Based CMOS Temperature Sensor With an Inaccuracy of 0.12 °C (3 $\sigma$ ) and a Resolution FoM of 0.43 pJ $\cdot$ K $^{2}$ in 65-nm CMOS
2. 5.3 A Highly Digital 2210μm2 Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS
3. A Resistor-Based Temperature Sensor With a 0.13 pJ $\cdot$ K2 Resolution FoM
4. A 174 pW–488.3 nW 1 S/s–100 kS/s All-Dynamic Resistive Temperature Sensor With Speed/Resolution/Resistance Adaptability
5. A 2800-pm2 thermal-diffusivity temperature sensor with VCO-based readout in 160-nm CMOS;angevare;IEEE Asian Solid-State Circuits Conference (A-SSCC),2015
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