A Resilient and Power-Efficient Automatic-Power-Down Sense Amplifier for SRAM Design
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/8920/4653500/04653514.pdf?arnumber=4653514
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A latch-based sense amplifier with improved performance for single ended SRAM application;Physica Scripta;2023-05-30
2. A Switching NMOS Based Single Ended Sense Amplifier for High Density SRAM Applications;ACM Transactions on Design Automation of Electronic Systems;2023-03-19
3. Subthreshold Modeling of a Tunable CMOS Schmitt Trigger;IEEE Access;2023
4. Rooting Of PPN Technique on 8T-SRAM for Low Power Multimedia Applications;2022 International Conference on Computer Communication and Informatics (ICCCI);2022-01-25
5. A Variation Tolerant Nanoscale SRAM for Low Power Wireless Sensor Nodes;Wireless Personal Communications;2022-01-17
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