An 80 GHz Power Amplifier with 17.4 dBm Output Power and 18 % PAE in 22 nm FD-SOI CMOS for Binary-Phase Modulated Radars-Reference-Cited by-同舟云学术

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An 80 GHz Power Amplifier with 17.4 dBm Output Power and 18 % PAE in 22 nm FD-SOI CMOS for Binary-Phase Modulated Radars

Published:2020-12-08 Issue: Volume: Page:
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Container-title:2020 IEEE Asia-Pacific Microwave Conference (APMC)
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Author:

Li Songhui,Cui Mengqi,Xu Xin,Szilagyi Laszlo,Carta Corrado,Finger Wolfgang,Ellinger Frank

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9331328/9331323/09331405.pdf?arnumber=9331405

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 76–81-GHz Power Amplifier With 14.6-dBm P_sat and 25.1% PAE on 22-nm FDSOI Technology;IEEE Microwave and Wireless Technology Letters;2024-01

2. A Low-Voltage Broadband D-Band BPSK Modulator for a PMCW Radar Transmitter in 22 nm FDSOI;2022 Asia-Pacific Microwave Conference (APMC);2022-11-29

3. A highly linear 79 GHz Low-Noise Amplifier for Civil-Automotive Radars in 22 nm FD-SOI CMOS with -6 dBm iP_1dB and 5 dB NF;2021 16th European Microwave Integrated Circuits Conference (EuMIC);2022-04-03

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