Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Published:2022-05-28 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Symposium on Circuits and Systems (ISCAS)
language:
Short-container-title:

Author:

Xue Chang¹,Zhang Yihan¹,Chen Peiyu¹,Zhu Mingwei¹,Wu Tianqiao¹,Wu Meng¹,He Yandong¹,Ye Le¹

Affiliation:

1. Peking University,School of Integrated Circuits,Beijing,China,100871

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9937201/9937203/09937703.pdf?arnumber=9937703

Reference12 articles.

1. 7.2 4Mb STT-MRAM-based cache with memory-access-aware power optimization and write-verify-write / read-modify-write scheme

2. A 28nm 32Kb embedded 2T2MTJ STT-MRAM macro with 1.3ns read-access time for fast and reliable read applications

3. STT-RAM Energy Reduction Using Self-Referenced Differential Write Termination Technique

4. A Quasi-Analytical Model for Energy-Delay-Reliability Tradeoff Studies During Write Operations in a Perpendicular STT-RAM Cell

5. A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Survey of Emerging Memory in a Microcontroller Unit;Micromachines;2024-04-01

2. Spin Transfer Torque Magnetic Random Access Memory With Built-in-Self-Trimming After-Test Writing Strategy;IEEE Transactions on Magnetics;2023-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP