Fabrication of gate-all-around transistors using metal induced lateral crystallization-Reference-Cited by-同舟云学术

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Fabrication of gate-all-around transistors using metal induced lateral crystallization

Published:2001-02 Issue:2 Volume:22 Page:80-82
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chan V.W.C.,Chan P.C.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/19532/00902838.pdf?arnumber=902838

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration;Micromachines;2022-07-20

2. Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization;Applied Physics Letters;2005-10-03

3. Effects of Channel Width and NH[sub 3] Plasma Passivation on Electrical Characteristics of Polysilicon Thin-Film Transistors by Pattern-Dependent Metal-Induced Lateral Crystallization;Journal of The Electrochemical Society;2005

4. P-12: Mobility Enhancement of Pattern-dependent Metal-Induced Lateral Crystallization Polysilicon Thin-Film Transistors with Different Dimensions;SID Symposium Digest of Technical Papers;2005

5. A Self-Aligned Gate-All-Around MOS Transistor on Single-Grain Silicon;Electrochemical and Solid-State Letters;2004

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