Voltage Tuning for Reliable Computation in Emerging Resistive Memories-Reference-Cited by-同舟云学术

Voltage Tuning for Reliable Computation in Emerging Resistive Memories

Published:2022-04-25 Issue: Volume: Page:
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Container-title:2022 IEEE 40th VLSI Test Symposium (VTS)
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Author:

Mayahinia Mahta¹,Jafari Atousa¹,Tahoori Mehdi B.¹

Affiliation:

1. Karlsruhe Institute of Technology (KIT),Department of Computer Science,Karlsruhe,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9793839/9794139/09794233.pdf?arnumber=9794233

Reference28 articles.

1. ReRAM: History, Status, and Future

2. Scouting Logic: A Novel Memristor-Based Logic Design for Resistive Computing

3. HRS Instability in Oxide-Based Bipolar Resistive Switching Cells

4. Rtn based oxygen vacancy probing method for oxrram reliability characterization and its application in tail bits;huang;2017 IEEE International Electron Devices Meeting (IEDM),2017

5. Challenges and Trends inDeveloping Nonvolatile Memory-Enabled Computing Chips for Intelligent Edge Devices

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