Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon-Reference-Cited by-同舟云学术

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Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

Published:2019-01 Issue: Volume: Page:
ISSN:
Container-title:2019 92nd ARFTG Microwave Measurement Conference (ARFTG)
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Author:

Andric Stefan,Ohlsson Lars,Wenrersson Lars-Erik

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8632668/8637213/08637222.pdf?arnumber=8637222

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF Characterization of Ferroelectric MOS Capacitors;IEEE Electron Device Letters;2024-09

2. Methodology to Accurately Replicate a Non-Planar Thin-Film Microstrip BEOL in 3D EM Simulation;2024 IEEE Radio and Wireless Symposium (RWS);2024-01-21

3. Advancements in Back End of Line Technology: Enhancing Semiconductor Manufacturing Efficiency;Handbook of Emerging Materials for Semiconductor Industry;2024

4. Lateral III–V Nanowire MOSFETs in Low-Noise Amplifier Stages;IEEE Transactions on Microwave Theory and Techniques;2022-02

5. Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design;IEEE Transactions on Nanotechnology;2021

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