Oxides on SiC-Reference-Cited by-同舟云学术

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Oxides on SiC

Published:1997 Issue: Volume: Page:
ISSN:
Container-title:Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97
language:
Short-container-title:

Author:

Cooper

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5226/14123/00649363.pdf?arnumber=649363

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients;Solid-State Electronics;2024-05

2. Industrial approach to the chip and package reliability of SiC MOSFETs (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

3. High Temperature Gate Voltage Step-by-Step Test to Assess Reliability Differences in 1200 V SiC MOSFETs;Materials Science Forum;2020-07

4. Reliability and reliability investigation of wide-bandgap power devices;Microelectronics Reliability;2018-09

5. Reliability and Reliability Testing;Semiconductor Power Devices;2018

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