Preparation of Silicon (111) Surface for Epitaxial Growth of III-Nitride Structures by MBE-Reference-Cited by-同舟云学术

Preparation of Silicon (111) Surface for Epitaxial Growth of III-Nitride Structures by MBE

Published:2022-06-30 Issue: Volume: Page:
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Container-title:2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Bashkatov Dmitriy D.¹,Milakhin Denis S.¹,Malin Timur V.²,Vdovin Vladimir I.³,Kozhukhov Anton S.³,Zhuravlev Konstantin S.¹

Affiliation:

1. Rzhanov Institute of Semiconductor Physics (ISP SB RAS) Novosibirsk State Technical University,dept. of Physics and Engineering of Semiconductor Structures,Novosibirsk,Russia

2. Rzhanov Institute of Semiconductor Physics (ISP SB RAS),dept. of Physics and Engineering of Semiconductor Structures,Novosibirsk,Russia

3. Rzhanov Institute of Semiconductor Physics (ISP SB RAS),dept. of Physics and Technology of Low-Dimensional Semiconductors, Micro and Nanostructures,Novosibirsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855012/9854868/09855155.pdf?arnumber=9855155

Reference15 articles.

1. AlN grown on Si(1 1 1) by ammonia-molecular beam epitaxy in the 900–1200 °C temperature range

2. Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging

3. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

4. GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

5. High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

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1. Chemical Kinetics of the Nitridation Process of Silicon Si(111) Substrates at Different Ammonia Fluxes;2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM);2023-06-29