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Analysis of High-Speed PCB With SiC Devices by Investigating Turn-Off Overvoltage and Interconnection Inductance Influence

  • Published:2015-08 Issue:2 Volume:1 Page:118-125
  • ISSN:2332-7782
  • Container-title:IEEE Transactions on Transportation Electrification
  • language:
  • Short-container-title:IEEE Trans. Transp. Electrific.

Author:

Noppakunkajorn Jukkrit,Han Di,Sarlioglu Bulent

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Transportation,Automotive Engineering

Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Axisymmetric SiC MOSFET Multichip Module with Staggered Terminals Design for Lowing Current Imbalance and Parasitic Inductance;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. An Accurate Predictive Method of Crosstalk Peaks Considering Dynamic Transfer Characteristics and Miller Ramp for SiC MOSFETs;IEEE Transactions on Power Electronics;2024-05

3. Challenges of SiC devices adopted in LCC resonant converters for high voltage X-ray generator applications;2024 7th International Conference on Energy, Electrical and Power Engineering (CEEPE);2024-04-26

4. Influence of Stray Capacitance in Inverter Main Circuits on Switching Characteristics and Mitigation Techniques;IEEJ Transactions on Industry Applications;2024-04-01

5. Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET;IEEE Journal of the Electron Devices Society;2024
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