An Adaptive Stacked Radio-Frequency SOI Power Amplifier for Radiation-Hardened Applications
Author:
Affiliation:
1. UESTC,Chengdu,China
2. Nanjing Electronic Equipment Institute,Nanjing,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9823394/9823964/09825296.pdf?arnumber=9825296
Reference10 articles.
1. Radiation Hardened by Design RF Circuits Implemented in 0.13 $\mu$m CMOS Technology
2. Radiation Effects in MOS Oxides
3. A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS
4. A Radiation-Hardened Injection Locked Oscillator Devoted to Radio-Frequency Applications
5. The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients
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