BCD (Bipolar-CMOS-DMOS) technology trends for power management IC
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5934627/5944368/05944616.pdf?arnumber=5944616
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. High-Voltage ESD Protection Devices With High Robustness of 13 kV and Strong Radiation Tolerance up to 200 krad(Si);IEEE Transactions on Electron Devices;2024-06
3. The Advances in Conversion Techniques in Triboelectric Energy Harvesting: A Review;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-07
4. Single event transient analysis of isolation problems for the high side devices in a 0.18μm BCD Process;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24
5. Characterization of Single-Poly EEPROM in 0.18μm BCD(Bipolar-CMOS-DMOS) Technology;2023 6th International Conference on Electronics Technology (ICET);2023-05-12
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