The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂-Reference-Cited by-同舟云学术

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The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂

Published:2024-05 Issue:5 Volume:71 Page:2876-2880
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Fan¹^ORCID,Zhang Zhaohao¹^ORCID,Yao Jiaxin¹^ORCID,Zhu Xiaohui¹^ORCID,Peng Yue²^ORCID,Huo Jiali¹^ORCID,Zhang Qingzhu¹^ORCID,Xu Gaobo¹^ORCID,Wu Zhenhua¹^ORCID,Han Genquan²^ORCID,Liu Yan²^ORCID,Yin Huaxiang¹^ORCID

Affiliation:

1. Integrated Circuit Advanced Process Research and Development Center and State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, CAS, Beijing, China

2. School of Microelectronics, Xidian University, Xi’an, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Youth Innovation Promotion Association, Chinese Academy of Sciences

Major Program of Zhejiang Natural Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10478969.pdf?arnumber=10478969

Reference25 articles.

1. CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

2. Negative Capacitance Carbon Nanotube FETs

3. All-optical computing based on convolutional neural networks

4. Visual tracking based on transfer learning of deep salience information

5. Ferroelectricity in Simple Binary ZrO2 and HfO2

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