Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol-Reference-Cited by-同舟云学术

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Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol

Published:2024-09 Issue:9 Volume:71 Page:5761-5766
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Salvador E.¹^ORCID,Rodriguez R.¹^ORCID,Miranda E.¹^ORCID,Martin-Martinez J.¹^ORCID,Rubio A.²^ORCID,Ntinas V.²^ORCID,Sirakoulis G. Ch.³^ORCID,Crespo-Yepes A.¹^ORCID,Nafria M.¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Universitat Autònoma de Barcelona, Bellaterra, Spain

2. Department of Electronic Engineering, Universitat Politècnica de Catalunya, Barcelona, Spain

3. Department of Electrical and Computer Engineering, Democritus University of Thrace, Kimmeria, Xanthi, Greece

Funder

Spanish MCIN/AEI/10

MCIN/AEI/10

Departament de Recerca i Universitats de la Generalitat de Catalunya for the 2020

Scholarship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10632173.pdf?arnumber=10632173

Reference32 articles.

1. Memristive Devices for New Computing Paradigms

2. First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip

3. Nanoscale resistive switching devices for memory and computing applications

4. In-memory computing with resistive switching devices

5. Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity With RRAM Synapses

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