Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration-Reference-Cited by-同舟云学术

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Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration

Published:2024-04 Issue:4 Volume:71 Page:2423-2430
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Xiaohua¹^ORCID,Bengel Christopher²^ORCID,Cüppers Felix³^ORCID,Solfronk Oliver¹,Zhang Bojian¹,Hoffmann-Eifert Susanne³^ORCID,Menzel Stephan¹^ORCID,Waser Rainer¹^ORCID,Wiefels Stefan¹^ORCID

Affiliation:

1. Forschungszentrum Jülich GmbH, Peter-Grünberg-Institut 7 (PGI-7) and JARA-FIT, Jülich, Germany

2. Institut für Werkstoffe der Elektrotechnik II (IWE II) and JARA-FIT, RWTH Aachen University, Aachen, Germany

3. Forschungszentrum Jülich GmbH, Peter-Grünberg-Institut 10 (PGI-10) and JARA-FIT, Jülich, Germany

Funder

Federal Ministry of Education and Research (BMBF, Germany) through the project NEUROTEC

NeuroSys

[based on the Jülich Aachen Research Alliance (JARA-Fit)]

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10461986.pdf?arnumber=10461986

Reference27 articles.

1. Face classification using electronic synapses

2. Redox-based memristive devices for new computing paradigm

3. RRAM-based synapse devices for neuromorphic systems

4. Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior

5. Reduction of the Cell-to-Cell Variability in Hf1-xAlxOyBased RRAM Arrays by Using Program Algorithms

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