In-Depth Analysis of Transistor Influence on OxRAM Performance in Memory Bitcell, With Technology Scaling Perspectives
Author:
Affiliation:
1. Univ. Grenoble Alpes, CEA, Leti, France
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10482422/10438355.pdf?arnumber=10438355
Reference41 articles.
1. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses;Baek
2. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays;Luo;Nanoscale,2016
3. Fabrication of low-power RRAM for stateful hyperdimensional computing;Dubreuil
4. OxRAM for embedded solutions on advanced node: Scaling perspectives considering statistical reliability and design constraints;Sandrini
5. Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy
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