Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition-Reference-Cited by-同舟云学术

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Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Published:2024-09 Issue:9 Volume:71 Page:5739-5743
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Park Yungyeong¹,Park Yosep¹^ORCID,Choi Hyeonseok¹^ORCID,Lim Subeen¹^ORCID,Kim Dongwook²,Lee Yeonghun³^ORCID

Affiliation:

1. Department of Electronics Engineering, Incheon National University, Incheon, Republic of Korea

2. Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, USA

3. Department of Electronics Engineering, the Department of Intelligent Semiconductor Engineering, and the Research Institute for Engineering and Technology, Incheon National University, Incheon, Republic of Korea

Funder

Incheon National University Research Grant in 2022

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10606287.pdf?arnumber=10606287

Reference36 articles.

1. The era of hyper-scaling in electronics

2. Transistors based on two-dimensional materials for future integrated circuits

3. Z2Topological Order and the Quantum Spin Hall Effect

4. Quantum Spin Hall Effect in Graphene

5. Quantum Spin Hall States and Topological Phase Transition in Germanene

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