Performance augmentation of radiation-resilient III-nitride based multi-junction solar cells with varying composition and thickness of the cap layer
Author:
Affiliation:
1. University of Calcutta,Institute of Radio Physics and Electronics,Kolkata,India,700091
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10028779/10028780/10028892.pdf?arnumber=10028892
Reference26 articles.
1. Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers
2. Modeling of InGaP/InGaAs-GaAsP/Ge multiple quantum well solar cell to improve efficiency for space applications
3. The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior
4. High internal and external quantum efficiency InGaN/GaN solar cells
5. Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar Cell
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