Simulations of GaAs Photoconductive Switch by Using Improved Carrier Velocity Formula under Ultra-high Electric Field
Author:
Affiliation:
1. University of Electronic Science and Technology of China,School of Physics,Chengdu,China,611731
2. Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration,Chengdu,China,610036
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10616250/10617814/10618190.pdf?arnumber=10618190
Reference12 articles.
1. Theory of high-field transport of holes in GaAs and InP
2. Importance of low-field drift velocity characteristics for HEMT modeling
3. Modeling GaAs high-voltage, subnanosecond photoconductive switches in one spatial dimension
4. Ultrahigh field multiple Gunn domains as the physical reason for superfast (picosecond range) switching of a bipolar GaAs transistor
5. Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations
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