InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate-Reference-Cited by-同舟云学术

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InP HBT Thermal Management by Transferring to High Thermal Conductivity Silicon Substrate

Published:2014-10 Issue:10 Volume:35 Page:1010-1012
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Thiam Arame,Roelens Yannick,Coinon Christophe,Avramovic Vanessa,Grandchamp Brice,Ducatteau Damien,Wallart Xavier,Maneux Cristell,Zaknoune Mohammed

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6908043/06894109.pdf?arnumber=6894109

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate;Materials;2021-09-29

2. Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems;Applied Sciences;2021-03-08

3. First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding;physica status solidi (a);2020-09-29

4. Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization;Japanese Journal of Applied Physics;2019-12-13

5. Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation;IEEE Transactions on Electron Devices;2018-12

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