First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding-Reference-Cited by-同舟云学术

First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding

Published:2020-09-29 Issue:3 Volume:218 Page:2000395
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yamada Yuki¹^ORCID,Nada Masahiro²,Uomoto Miyuki³,Shimatsu Takehito³,Nakajima Fumito¹,Matsuzaki Hideaki¹

Affiliation:

1. NTT Device Technology Laboratories NTT Corporation 3-1, Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan

2. NTT Device Innovation Center NTT Corporation 3-1, Morinosato Wakamiya Atsugi-shi Kanagawa 243-0198 Japan

3. Research Institute of Electrical Communication Tohoku University Katahira 2-1-1, Aoba-ku Sendai 980-8577 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000395

Reference28 articles.

1. InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation

2. High-Power and High-Speed Heterogeneously Integrated Waveguide-Coupled Photodiodes on Silicon-on-Insulator

3. High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode

4. Improved power conversion efficiency in high-performance photodiodes by flip-chip bonding on diamond

5. High Power Photodiode Wafer Bonded to Si Using Au With Improved Responsivity and Output Power

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