New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation

Published:2014-11 Issue:11 Volume:35 Page:1115-1117
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Duan Baoxing,Yuan Song,Cao Zhen,Yang Yintang

Funder

National Key Basic Research Program of China

State Key Program, National Natural Science Foundation of China (NSFC)

Young Scientists Fund, NSFC

NSFC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6932512/06914540.pdf?arnumber=6914540

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substrate Current Improvement and Investigation in Low Voltage Power Ldmos with A Novel Design;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. A deep trench super-junction LDMOS with double charge compensation layer;Journal of Semiconductors;2022-10-01

3. Accumulation-Mode Silicon Carbide Laterally Diffused Metal Oxide Semiconductor with Low Specific on Resistance;Journal of Nanoelectronics and Optoelectronics;2022-08-01

4. Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-07-08

5. Novel fast-switching LIGBT with P-buried layer and partial SOI*;Chinese Physics B;2021-02-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP