Raised breakdown voltage in a <scp>high‐voltage</scp> recessed <scp>LDD‐SOI</scp> by submerged <scp>SI3N4</scp>-Reference-Cited by-同舟云学术

Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4

Published:2022-07-08 Issue:2 Volume:36 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Daneshpajooh Reza¹,Anvarifard Mohammad K.²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering Ayandegan Institute of Higher Education Tonekabon Mazandaran Iran

2. Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan Rudsar‐Vajargah Iran

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.3044

Reference15 articles.

1. Improvement the breakdown voltage and the on‐resistance in the LDMOSFET: double buried metal layers structure;Shokouhi Shoormasti A;Silicon,2020

2. Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

3. Upper drift region double step partial SOI LDMOSFET: a novel device for enhancing breakdown voltage and output characteristics;Jamali Mahabadi SE;Superlattices Microstruct,2015

4. New Superjunction LDMOS With the Complete Charge Compensation by the Electric Field Modulation

5. Analytical model of LDMOS with a single step buried oxide layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Nanoscale FD-SOI MOSFET with Energy Barrier and Heat-Sink Engineering for Enhanced Electric Field Uniformity;Micro and Nanostructures;2024-09