Impact of Ground Via Placement in On-Wafer Contact Pad Design up to 325 GHz-Reference-Cited by-同舟云学术

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Impact of Ground Via Placement in On-Wafer Contact Pad Design up to 325 GHz

Published:2018-08 Issue:8 Volume:8 Page:1440-1450
ISSN:2156-3950
Container-title:IEEE Transactions on Components, Packaging and Manufacturing Technology
language:
Short-container-title:IEEE Trans. Compon., Packag. Manufact. Technol.

Author:

Muller Daniel¹^ORCID,Schafer Jochen¹^ORCID,Massler Hermann²,Ohlrogge Matthias²^ORCID,Zwick Thomas¹^ORCID,Kallfass Ingmar³^ORCID

Affiliation:

1. Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Karlsruhe, Germany

2. Fraunhofer Institute of Applied Solid State Physics, Freiburg, Germany

3. Institute of Robust Power Semiconductor Systems, Stuttgart, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503870/8425668/08327553.pdf?arnumber=8327553

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadband Low-Loss Fan-In Chip-to-Package Interconnect Enabling System-in-Package Applications Beyond 220 GHz;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-05

2. A SiGe Based 0.48 THz Signal Source with 45 GHz Tuning Range;2021 51st European Microwave Conference (EuMC);2022-04-04

3. Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz;IEEE Transactions on Terahertz Science and Technology;2020-09

4. A Transmitter System-in-Package at 300 GHz With an Off-Chip Antenna and GaAs-Based MMICs;IEEE Transactions on Terahertz Science and Technology;2019-05

5. Broadband on‐chip contact pad to microstrip transition with low loss in SiGe BiCMOS technology;Electronics Letters;2018-11

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