Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit-Reference-Cited by-同舟云学术

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Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit

Published:2006-03 Issue:3 Volume:53 Page:515-522
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kejun Xia ,Guofu Niu ,Sheridan D.C.,Sweeney S.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/33601/01597529.pdf?arnumber=1597529

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlated noise in bipolar transistors: Model implementation issues;Solid-State Electronics;2015-12

2. Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications;IEEE Transactions on Electron Devices;2014-07

3. Evaluation and Modeling of Relative Importance of RF Noise Sources in SiGe HBTs Using Various Noise Representations;ECS Transactions;2013-03-15

4. A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling;IEEE Transactions on Electron Devices;2012-02

5. Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling;Solid-State Electronics;2010-12

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