Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
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3. The transient integral charge control relation – a novel formulation of the currents in a bipolar transistor;Klose;IEEE Electron Dev Lett,1987
4. A charge-based large-signal bipolar transistor model for device and circuit simulation;Jeong;IEEE Trans Electron Dev,1989
5. Paasschens JCJ, van der Toorn R, Kloosterman WJ. Manual for Mextram bipolar transistor model, the NXP. .
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1. High-Frequency Noise Characterization and Modeling of SiGe HBTs;IEEE Transactions on Microwave Theory and Techniques;2018-12
2. Graded Applications of NQS Theory for Modeling Correlated Noise in SiGe HBTs;IEEE Transactions on Electron Devices;2015-08
3. Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme;IEEE Transactions on Electron Devices;2012-09
4. A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling;IEEE Transactions on Electron Devices;2012-02
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