Qubit Bias using a CMOS DAC at mK Temperatures-Reference-Cited by-同舟云学术

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Qubit Bias using a CMOS DAC at mK Temperatures

Published:2022-10-24 Issue: Volume: Page:
ISSN:
Container-title:2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
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Author:

Otten R.¹,Schreckenberg L.²,Vliex P.²,Ritzmann J.³,Ludwig A.³,Wieck A. D.³,Bluhm H.¹

Affiliation:

1. JARA Institute for Quantum Information, RWTH Aachen University and Forschungszentrum Jülich GmbH,Aachen,Germany

2. Central Institute of Engineering,Electronics and Analytics, Electronic Systems (ZEA-2) Forschungszentrum Jülich GmbH,Jülich,Germany

3. Ruhr-Universitat Bochum,Lehrstuhl für Angewandte Festkorperphysik,Bochum,Germany

Funder

Federal Ministry of Education and Research

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9970762/9970770/09971043.pdf?arnumber=9971043

Reference14 articles.

1. On-chip integration of Si/SiGe-based quantum dots and switched-capacitor circuits

2. Charge Noise Spectroscopy Using Coherent Exchange Oscillations in a Singlet-Triplet Qubit

3. A cryogenic DAC operating down to 4.2 K

4. Bias Generation and Calibration of CMOS Charge Qubits at 3.5 Kelvin in 22-nm FDSOI

5. A 3V 15b 157μW Cryo-CMOS DAC for Multiplexed Spin-Qubit Biasing

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The SpinBus architecture for scaling spin qubits with electron shuttling;Nature Communications;2024-06-11

2. Cryogenic flip-chip interconnection for silicon qubit devices;Japanese Journal of Applied Physics;2024-03-01

3. Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe;Nature Communications;2024-02-13

4. SiGe Qubit Biasing with a Cryogenic CMOS DAC at mK Temperature;ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC);2023-09-11

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