A 18.05 ppm/°C, $38.5\ \mu W$ Bandgap Reference Based on Weak Inversion Region Operation Design
Author:
Affiliation:
1. Sungkyunkwan University,Department of Electrical and Computer Engineering,Suwon,Korea
Funder
Korea Institute for Advancement of Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9970762/9970770/09970903.pdf?arnumber=9970903
Reference13 articles.
1. A Sub-1 V, 10 ppm/°C, Nanopower Voltage Reference Generator
2. 1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs
3. A 0.8V, 37nW, 42ppm/°C sub-bandgap voltage reference with PSRR of −81dB and line sensitivity of 51ppm/V in 0.18um CMOS
4. A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET
5. A design of ultra-low noise LDO using noise reduction network techniques
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