Performance Comparison of BJT and MOS Devices as Temperature Sensing Elements
Author:
Affiliation:
1. University of Pavia,Department of Electrical, Computer and Biomedical Engineering,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9970762/9970770/09970964.pdf?arnumber=9970964
Reference11 articles.
1. Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process
2. Miniaturized BJT-Based Thermal Sensor for Microprocessors in 32- and 22-nm Technologies
3. A Compact 2.5-nJ Energy/Conversion NPN-Based Temperature-to-Digital Converter with a Fully Current-Mode Processing Architecture
4. An Extensive Investigation and Analysis of Temperature-to-Digital Converter FoMs
5. A 490-pW SAR Temperature Sensor With a Leakage-Based Bandgap-Vth Reference
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A MOS-Based Temperature Sensor With Inherent Inaccuracy Reduction Enabled by Time-Domain Operation;IEEE Transactions on Instrumentation and Measurement;2023
2. Temperature-to-Digital Converters’ Evolution, Trends and Techniques across the Last Two Decades: A Review;Micromachines;2022-11-19
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