Analysis of Current Drift in Al<sub>2</sub>O<sub>3</sub> Gated Junctionless pH Sensitive Field Effect Transistor-Reference-Cited by-同舟云学术

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Analysis of Current Drift in Al₂O₃ Gated Junctionless pH Sensitive Field Effect Transistor

Published:2021-12 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Symposium on Smart Electronic Systems (iSES)
language:
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Author:

Parmar Jaydeep Singh¹,Bhat Asif¹,Shafi Nawaz¹,Porwal Ankita¹,Periasamy C.¹,Sahu Chitrakant¹

Affiliation:

1. Malaviya National Institute of Technology,Dept. of Electronics and Communication,Jaipur,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9700979/9700995/09701098.pdf?arnumber=9701098

Reference18 articles.

1. Cmos-compatible ex-situ incorporated junctionless enhancement-mode thin polysilicon film fet ph sensor;parmar;IEEE Transactions on Device and Materials Reliability,2020

2. Hydrogen-ion Sensing Characteristics of Cavity Based Triple-Gate Junctionless Biofet for Enhanced Sensitivity

3. Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment

4. A physically-based model for drift in Al/sub 2/O/sub 3/-gate pH ISFET's

5. A physical model for threshold voltage instability in Si/sub 3/N/sub 4/-gate H/sup +/-sensitive FET's (pH ISFET's)

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Analytical Assessment of Non-Ideal Ion-Sensitive β-MIS-(AlGa)₂O₃/Ga₂O₃ High Electron Mobility Transistor;IEEE Transactions on Nanotechnology;2023

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