Design and Analytical Assessment of Non-Ideal Ion-Sensitive β-MIS-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor
Author:
Affiliation:
1. VLSI Lab, ECE Department, Dr. B.R. Ambedkar National Institute of Technology, Jalandhar, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/10016255/10041796.pdf?arnumber=10041796
Reference30 articles.
1. Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements
2. AlGaN/GaN high electron mobility transistor sensor sensitive to ammonium ions
3. Development, Operation, and Application of the Ion-Sensitive Field-Effect Transistor as a Tool for Electrophysiology
4. Analysis of Current Drift in Al2O3 Gated Junctionless pH Sensitive Field Effect Transistor
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