Kink and power saturation of 660-nm AlGaInP laser diodes-Reference-Cited by-同舟云学术

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Kink and power saturation of 660-nm AlGaInP laser diodes

Published:2005-06 Issue:6 Volume:41 Page:828-832
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Yoshida Y.,Sasaki M.,Shibata K.,Kawazu Z.,Ono K.-I.,Nishiguchi H.,Yagi T.,Nishimura T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/3/30896/01432972.pdf?arnumber=1432972

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TO packaged 650nm red semiconductor laser with transparent window;SPIE Proceedings;2016-11-09

2. 670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power;Novel In-Plane Semiconductor Lasers X;2011-02-10

3. Nearly Diffraction-Limited Tapered Lasers at 675 nm With 1-W Output Power and Conversion Efficiencies Above 30%;IEEE Photonics Technology Letters;2011-02

4. Numerical study on lateral mode behavior of 660-nm InGaP/AlGaInP multiple-quantum-well laser diodes;Optical Review;2009-05

5. Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology;IEEE Journal of Selected Topics in Quantum Electronics;2007

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