Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation-Reference-Cited by-同舟云学术

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Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation

Published:2012-04 Issue:4 Volume:59 Page:895-901
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nakayama Koji,Tanaka Atsushi,Nishimura Masahiko,Asano Katsunori,Miyazawa Tetsuya,Ito Masahiko,Tsuchida Hidekazu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6172314/06134646.pdf?arnumber=6134646

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes;Journal of Applied Physics;2024-06-17

2. A review of the etched terminal structure of a 4H-SiC PiN diode;Journal of Semiconductors;2023-11-01

3. Carrier lifetime modulation on current capability of SiC PiN diodes in a pulsed system;Discover Nano;2023-10-16

4. Carrier lifetime modulation on current capability of SiC PiN diodes in a pulsed system;2023-09-06

5. Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature;IEEE Transactions on Power Electronics;2023-01

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