Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate-Reference-Cited by-同舟云学术

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Design and Fabrication of 4H–SiC Lateral High-Voltage Devices on a Semi-Insulating Substrate

Published:2012-03 Issue:3 Volume:59 Page:754-760
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Wen-Shan,Chu Kuan-Wei,Huang Chih-Fang,Lee Lurng-Shehng,Tsai Min-Jinn,Lee Kung-Yen,Zhao Feng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6155188/06107573.pdf?arnumber=6107573

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.43 kV 4H-SiC Lateral Junction Barrier Schottky Diode With High BFOM (390 MW/cm²);IEEE Electron Device Letters;2024-08

2. Lateral 1200V SiC schottky barrier diode with single event burnout tolerance;Power Electronic Devices and Components;2024-08

3. Silicon Carbide-Based DNA Sensing Technologies;Micromachines;2023-08-04

4. Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate;IEEE Transactions on Electron Devices;2023-04

5. A 1400V SiC LDMOS with P-tops and P-buffer for Ultra-low Specific Resistance;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

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