Author:
Bosch D.,Andrieu F.,Garros X.,Ciampolini L.,Makosiej A.,Weber O.,Lacord J.,Cluzel J.,Giraud B.,Cibrario G.,Brunet L.,Batude P.,Fenouillet-Beranger C.,Lattard D.,Colinge J. P.,Balestra F.,Vinet M.
Cited by
1 articles.
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1. Retention Problem Free High Density 4T SRAM cell with Adaptive Body Bias in 18nm FD-SOI;2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID);2022-02