A fully integrated SiGe E-BAND transceiver chipset for broadband point-to-point communication-Reference-Cited by-同舟云学术

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A fully integrated SiGe E-BAND transceiver chipset for broadband point-to-point communication

Published:2012-01 Issue: Volume: Page:
ISSN:
Container-title:2012 IEEE Radio and Wireless Symposium
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Author:

Katz Oded,Ben-Yishay Roee,Carmon Roi,Sheinman Benny,Szenher Frank,Papae Donald,Elad Danny

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6170426/6175288/06175323.pdf?arnumber=6175323

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology;2022 Microwave Mediterranean Symposium (MMS);2022-05-09

2. Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications;IEEE Transactions on Circuits and Systems II: Express Briefs;2021-09

3. Design of High-Linearity Wideband Power Amplifiers;Analog Circuits and Signal Processing;2018-07-08

4. Is E-Band Satellite Communication Viable?: Advances in Modern Solid-State Technology Open Up the Next Frequency Band for SatCom;IEEE Microwave Magazine;2017-11

5. Layout-aware design methodology for a 75 GHz power amplifier in a 55 nm SiGe technology;Integration;2016-01

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