Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology-Reference-Cited by-同舟云学术

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Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology

Published:2022-05-09 Issue: Volume: Page:
ISSN:
Container-title:2022 Microwave Mediterranean Symposium (MMS)
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Author:

Amendola G.¹,Boccia L.¹,Centurelli F.²,Ciccognani W.³,Limiti E.³,Mustacchio C.¹,Tommasino P.²,Trifiletti A.²

Affiliation:

1. University of Calabria,Modellistica, Elettronica e Sistemistica,Dipartimento di Ingegneria Informatica,Rende,Italy

2. Universita di Roma La Sapienza,Information Engineering,Electronics and Telecommunications Department,Roma,Italy

3. Universita di Roma Tor Vergata,Electronic Engineering Department,Roma,Italy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9823395/9825496/09825549.pdf?arnumber=9825549

Reference11 articles.

1. Compact E-Band I/Q Receiver in SiGe BiCMOS for 5G Backhauling Applications

2. A 70–90-GHz High-Linearity Multi-Band Quadrature Receiver in ${\hbox{0.35-}}\mu{\hbox {m}}$ SiGe Technology

3. A Four-Port SiGe BiCMOS Duplexer for Ka-Band SatCom on the Move User Terminals

4. A 71–76 GHz wideband receiver front-end for phased array applications in 0.13 μm SiGe BiCMOS technology

5. Design of a MMIC low‐noise amplifier in industrial gallium arsenide technology for E‐band 5G transceivers

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