Innovative RF Device Technologies for Advanced Information and Communications Network Society
Author:
Affiliation:
1. Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Yokohama,Japan,244-8588
2. Tokyo Institute of Technology,Dept Electric and Electronic Engineering,Tokyo,Japan,152-8552
Funder
New Energy and Industrial Technology Development Organization
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051695.pdf?arnumber=10051695
Reference13 articles.
1. Wideband 1-Bit Bandpass Delta Sigma Modulator Using Elliptic Filter in Noise Transfer Function
2. High-Power-Density AlGaN/GaN Technplogy for 100-V Operation at L-Band Frequencies;krause;2017 IEEE International Electron Devices Meeting (IEDM),2017
3. (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device
4. Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing
5. Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design
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