Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs-Reference-Cited by-同舟云学术

Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Müller Markus¹,Nardmann Tobias¹,Froitzheim Maximilian¹,Schröter Michael¹

Affiliation:

1. TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062

Funder

National Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051728.pdf?arnumber=10051728

Reference13 articles.

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2. DMT -Device-Modeling-Toolkit;krattenmacher;HICUM Workshop,2019

3. Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling;nardmann;Books on Demand,2017

4. Thermal conductivity of epitaxially grown InP: experiment and simulation

5. Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development

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1. Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs;IEEE Microwave and Wireless Technology Letters;2024-08

2. Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part II: Application and Results;IEEE Transactions on Electron Devices;2023-10

4. Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11