Broadband 0.4-4 THz Generation in 90nm SiGe BiCMOS-Reference-Cited by-同舟云学术

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Broadband 0.4-4 THz Generation in 90nm SiGe BiCMOS

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Thomas Sidharth¹,Razavian Sam¹,Sun Wei¹,Kim Anthony D.¹,Wu Yu¹,Williams Benjamin S.¹,Babakhani Aydin¹

Affiliation:

1. University of California Los Angeles,Department of Electrical and Computer Engineering,CA,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051756.pdf?arnumber=10051756

Reference9 articles.

1. Silicon Integrated THz Comb Radiator and Receiver for Broadband Sensing and Imaging Applications

2. 20.5 1.4THz, −13dBm-EIRP frequency multiplier chain using symmetric- and asymmetric-CV varactors in 65nm CMOS

3. A Highly Power Efficient 2×3 PIN-Diode-Based Intercoupled THz Radiating Array at 425GHz with 18.1dBm EIRP in 90nm SiGe BiCMOS

4. Dual-comb spectroscopy

5. 9.74-THz electronic Far-Infrared detection using Schottky barrier diodes in CMOS

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid synaptic structure for spiking neural network realization;Superconductor Science and Technology;2024-05-13

2. A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS;IEEE Journal of Solid-State Circuits;2023-09

3. High-Power, Efficient THz Generation in Silicon for Broadband Sensing and Wireless Communication;2023 IEEE Custom Integrated Circuits Conference (CICC);2023-04

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