A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS
Author:
Affiliation:
1. Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/10229945/10172173.pdf?arnumber=10172173
Reference35 articles.
1. 160-GHz to 1-THz Multi-Color Active Imaging With a Lens-Coupled SiGe HBT Chip-Set
2. The HITRAN2020 molecular spectroscopic database
3. A 0.92-THz SiGe Power Radiator Based on a Nonlinear Theory for Harmonic Generation
4. A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy
5. Multi-spectral terahertz interferometric imaging based on a monolithic retroactive silicon chip
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1. A 360 GHz Single-element Multi-mode Orbital Angular Momentum Cavity Antenna-based Transmitter in 90nm SiGe BiCMOS;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
2. A 400-GHz Efficient Radiator and OOK Transceiver for Multi-Gb/s Wireless Communication in Silicon;IEEE Journal of Solid-State Circuits;2024-05
3. Photonic Terahertz Wireless Communication: Towards the Goal of High-Speed Kilometer-Level Transmission;Journal of Lightwave Technology;2024-02-01
4. Guest Editorial IEEE 2022 BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium;IEEE Journal of Solid-State Circuits;2023-09
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