Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs-Reference-Cited by-同舟云学术

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Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTs

Published:2022-10-16 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

P Sruthi M¹,K Nidhin¹,Shanbhag Ajay¹,Nair Deleep R¹,Chakravorty Anjan¹,DasGupta Nandita¹,Gupta Amitava Das¹

Affiliation:

1. Indian Institute of Technology,Department of Electrical Engineering,Madras, Chennai,India,600036

Funder

Science and Engineering Research Board

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051754.pdf?arnumber=10051754

Reference15 articles.

1. Sentaurus: Sentaurus device user guide, release H-2013.03;tcad,2013

2. A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization

3. Structural dependence of the thermal resistance of trench-isolated bipolar transistors

4. Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs

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