Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length-Reference-Cited by-同舟云学术

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Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

Published:2013-06 Issue:6 Volume:60 Page:1834-1843
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Luo Jieying,Wei Lan,Lee Chi-Shuen,Franklin Aaron D.,Guan Ximeng,Pop Eric,Antoniadis Dimitri A.,Wong H.-S. Philip

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6516920/06514047.pdf?arnumber=6514047

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