Rapid Optical Degradation of GaN-Based Light-Emitting Diodes by a Current-Crowding-Induced Self-Accelerating Thermal Process-Reference-Cited by-同舟云学术

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Rapid Optical Degradation of GaN-Based Light-Emitting Diodes by a Current-Crowding-Induced Self-Accelerating Thermal Process

Published:2014-03 Issue:3 Volume:61 Page:825-830
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jung Eunjin,Kim Hyunsoo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6746059/06717180.pdf?arnumber=6717180

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Enhancing current spreading performance of GaN-based ultraviolet light-emitting diode chips through periodic doping composite barrier structures;Ferroelectrics;2023-10-26

3. Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer;IEEE Photonics Journal;2023-06

4. Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs;IEEE Journal of Emerging and Selected Topics in Industrial Electronics;2023-01

5. Balanced Resistivity in n-AlGaN Layer to Increase the Current Uniformity for AlGaN-Based DUV LEDs;IEEE Photonics Technology Letters;2022-10-15

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