Modeling of the Steady State and Switching Characteristics of a Normally Off 4H-SiC Trench Bipolar-Mode FET-Reference-Cited by-同舟云学术

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Modeling of the Steady State and Switching Characteristics of a Normally Off 4H-SiC Trench Bipolar-Mode FET

Published:2013-04 Issue:4 Volume:60 Page:1404-1411
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pezzimenti Fortunato

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6482652/06470671.pdf?arnumber=6470671

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials;Transactions on Electrical and Electronic Materials;2023-12-20

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3. Analytical Current–Voltage Modeling and Analysis of the MFIS Gate-All-Around Transistor Featuring Negative-Capacitance;Electronics;2021-05-14

4. Boosted Perovskite Photodetector Performance Using Graphene as Transparent Electrode;Transactions on Electrical and Electronic Materials;2021-04-21

5. Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET;Electronics;2021-03-19

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